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The Power of the Pillar: Why Super Junction MOSFETs Rule High-Voltage Electronics
In the relentless pursuit of energy efficiency and smaller power supplies, the Super Junction (SJ) MOSFET has emerged as the semiconductor device of choice for high-voltage applications.
Unlike their conventional predecessors, these devices utilize a revolutionary internal structure that fundamentally breaks the age-old silicon trade-off between high breakdown voltage and low on-resistance. This innovation has not just improved power electronics; it has redefined their potential, driving a massive, high-growth market across the globe.
The Innovation Under the Hood: Charge Balancing
The secret to the Super Junction MOSFET's superior performance lies in its patented charge balancing architecture. Instead of a uniform silicon drift layer, the SJ structure incorporates alternating vertical P-type and N-type pillars.
